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| inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon npn power transistor 2SC2247 description high collector-emitter sustaining voltage- : v ceo(sus) = 400v (min) high switching speed applications power switching power amplification power driver absolute maximum ratings(t a =25 ) symbol parameter max unit v cbo collector-base voltage 450 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 5 v i c collector current-continuous 5 a i cm collector current-peak 10 a i b base current-continuous 2 a p c collector power dissipation @t c =25 40 w t j junction temperature 175 t stg storage temperature range -65~175
inchange semiconductor isc product specification isc website www.iscsemi.cn isc silicon npn power transistor 2SC2247 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustainig voltage i c = 100ma; l= 25mh 400 v v ce (sat) collector-emitter saturation voltage i c = 2a; i b = 0.4a 1.2 v v be (sat) base-emitter saturation voltage i c = 2a; i b = 0.4a 1.5 v h fe dc current gain i c = 2a; v ce = 5v 10 i cbo collector cutoff current v cb = 450v; i e = 0 t c =125 1.0 4.0 ma i ceo collector cutoff current v ce = 400v; i b = 0 5.0 ma i ebo emitter cutoff current v eb = 5v; i c = 0 1.0 ma switching times t r rise time 1.0 s t stg storage time 2.0 s t f fall time i c =2a; i b1 =- i b2 = 0.4a 1.0 s |
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